sic jfet asjd1200r045 asjd1200r045 rev. 0.0 12/10 micross components reserves the right to change products or speci cations without notice. 1 advanced information normally-on trench silicon carbide power jfet features: hermetic to-257 packaging ? 200c maximum operating temperature (260 ? o c contact factory) available screening: ? - mil-prf-19500 equivalent - space level - mil-std-750 methods & conditions inherent radiation tolerance >100k tid ? positive temperature coef cient for ease of paralleling ? extremely fast switching with no ?tail? current at 150c ? 1200 volt drain-source blocking voltage ? rds ? (on)max of 0.045 voltage controlled ? low gate charge ? low intrinsic capacitance ? applications: satellite solar inverters ? mil spec power supplies ? - switch mode - uninterrupted jet engine electronics ? down-hole electronics (motor / compressor control) ? maximum ratings bv ds 1200 v rds (on)max 0.045 : e ts,typ tbd j product summary parameter symbol conditions value unit i d, tj=125 t j = 125 c 50 i d, tj=150 t j = 150 c 40 pulsed drain current (1) i dm t c = 25 c 150 a short circuit withstand time t sc v dd < 800 v, t c < 125 c 50 s power dissipation p d t c = 25 c tbd w gate r source voltage v gs ac (2) r 15 to +15 v operating and storage temperature t j , t j,stg r 55 to +200* o c lead temperature for soldering t sold 1/8" from case < 10 s 260 o c (1) limited by pulse width (2) rg ext =1 ohm, t p < 200ns, see figure 5 for static conditions *consult factory for 260 o c continuous drain current a thermal characteristics typ max thermal resistance, junction r to r case r th,jc r tbd thermal resistance, junction r to r ambient r th,ja r tbd c / w value unit symbol parameter g (1) s (3) d (2,4) internal schematic 1 2 3 4 to-257 non-isolated tab version shown. for isolated tab version, tab (4) is no connect. die inside for more products and information, please visit our website at www.micross.com
sic jfet asjd1200r045 asjd1200r045 rev. 0.0 12/10 micross components reserves the right to change products or speci cations without notice. 2 advanced information min typ max drain r source blocking voltage bv ds v gs = r 15 v, i d = 600 ? a 1200 r r v v ds = 1200 v, v gs = r 15 v, tj = 25 o c r 220 v ds = 1200 v, v gs = r 15 v, tj = 150 o c r 20 400 v gs = r 15 v, v ds = 0v r r 0.1 r 0.6 v gs = r 15 v, v ds = 1200v r r 0.1 r i d = 40 a, v gs = 2 v, tj = 25 c r 0.035 0.045 i d = 40 a, v gs = 2 v, tj = 100 c r 0.07 r gate threshold voltage v gs(th) v ds = 1 v, i d = 34ma r 6.00 r r 4.00 v gate forward current i gfwd v gs = 2 v r 0 r ma r g f = 1 mhz, drain r source shorted r 4 r : r g(on) v gs >2.7v r 0.25 r : input capacitance c iss r 1340 r output capacitance c oss r 206 r reverse transfer capacitance c rss r 194 r effective output capacitance, energy related c o(er) v ds = 0 v to 600 v, v gs = 0 v r 110 r turn r on delay t on r tbd r rise time t r r tbd r turn r off delay t off r tbd r fall time t f r tbd r turn r on energy e on r tbd r turn r off energy e off r tbd r total switching energy e ts r tbd r turn r on delay t on r tbd r rise time t r r tbd r turn r off delay t off r tbd r fall time t f r tbd r turn r on energy e on r tbd r turn r off energy e off r tbd r total switching energy e ts r tbd r total gate charge q g r 65 r gate r source charge q gs r 4 r gate r drain charge q gd r 54 r v ds = 600 v, i d = 40 a, inductive load, t j = 150 o c v ds = 600v, i d = 5 a, v gs = + 2.5 v ns j ns j nc dynamic characteristics v dd = 100 v pf switching characteristics v ds = 600 v, i d = 40 a, inductive load, t j = 25 o c on characteristics drain r source on r resistance gate resistance r ds(on) : total gate reverse leakage i gss a ma total drain leakage current i dss off characteristics value unit symbol parameter conditions electrical characteristics
sic jfet asjd1200r045 asjd1200r045 rev. 0.0 12/10 micross components reserves the right to change products or speci cations without notice. 3 advanced information mechanical drawing ordering information base part number configuration package junction temp. range processing asjd1200r045 blank= non r isolated tab y=to r 257 r el blank s= isolated tab ex /v /s temp ranges: el= elevated temp. range, r 55 o c to 200 o c (t j ) ex= extreme temp. range, r 55 o c to 260 o c (t j ) (consult factory) processing: blank = commercial / standard processing mil r prf r 19500 equivalent processing available per scd /v= jantx mil r prf r 19500 equivalent (future standard offering) /s= jans mil r prf r 19500 equivalent (future standard offering) example part numbers: asjd1200r045sy r el asjd1200r045y r ex has commercial plastic versions of this product available. please refer to the semisouth website http://www.semisouth.com/products/products.html for datasheet speci cations and ordering information. the semisouth part number is sjdp120r045 and is supplied in a to-247 plastic package.
sic jfet asjd1200r045 asjd1200r045 rev. 0.0 12/10 micross components reserves the right to change products or speci cations without notice. 4 advanced information document title normally-on trench silicon carbide power jfet rev # history release date status 0.0 initial release december 2010 advanced information
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